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| AP60T03AH/J Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03AJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 45 32 120 44 0.352 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 110 Units /W /W Data and specifications subject to change without notice 200909033 AP60T03AH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 1135 200 135 Max. Units 12 25 3 1 250 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=15A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance 2 o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz o Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 23.3 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60T03AH/J 125 90 100 T C =25 o C 10V 8.0V ID , Drain Current (A) 6.0V 60 T C =175 C o 10V 8.0V 6.0V 5.0V ID , Drain Current (A) 75 5.0V 50 30 V G =4.0V 25 V G =4.0V 0 0.0 1.0 2.0 3.0 4.0 0 0.0 1.0 2.0 3.0 4.0 5.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2 I D =15A T C =25 60 1.6 I D =20A V G =10V Normalized R DS(ON) RDS(ON) (m ) 40 1.2 20 0.8 0 2 4 6 8 10 0.4 -50 25 100 175 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.8 100 2.3 10 VGS(th) (V) 1.5 Tj=175 o C IS(A) Tj=25 o C 1.8 1.3 1 0.8 0.1 0 0.5 1 0.3 -50 25 100 175 V SD (V) , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP60T03AH/J f=1.0MHz 12 10000 I D =20A VGS , Gate to Source Voltage (V) V DS =16V V DS =20V V DS =24V 9 Ciss 1000 6 C (pF) Coss Crss 100 3 0 10 0 6 12 18 24 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty Factor = 0.5 100 0.2 ID (A) 0.1 100us 1ms 10 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty Factor = t/T Peak Tj = PDM x Rthjc + TC T C =25 o C Single Pulse 1 0.1 1 10 10ms 100ms DC 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS TO THE OSCILLOSCOPE D RG + 10V G S VDS D 0.8 x RATED VDS G S VGS VGS + 1~ 3 mA IG 2E+08 ID Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit |
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